www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current ? -3.6 a i d @ t a = 70c -2.9 i dm pulsed drain current -29 p d @t a = 25c power dissipation ? 2.0 w p d @t a = 70c 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c l co-packaged hexfet ? power mosfet and schottky diode l ideal for buck regulator applications l p-channel hexfet l low v f schottky rectifier l generation 5 technology l so-8 footprint IRF7326D2 pd - 93763 fetky ? ? ? ? ? mosfet / schottky diode notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 9) i sd -1.8a, di/dt -90a/s, v dd v (br)dss , t j 150c a pulse width 300s; duty cycle 2% ? surface mounted on fr-4 board, t 10sec. parameter maximum units r q ja junction-to-ambient ? 62.5 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings description v dss = -30v r ds(on) = 0.10 w schottky vf = 0.52v the fetky family of co-packaged mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. generation 5 hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combinining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. top view 8 1 2 3 4 5 6 7 a a s g d d k k so-8 8/19/99
IRF7326D2 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 v v gs = 0v, i d = -250a r ds(on) static drain-to-source on-resistance 0.073 0.10 v gs = -10v, i d = -1.8a ? 0.13 0.16 v gs = -4.5v, i d = -1.5a ? v gs(th) gate threshold voltage -1.0 v v ds = v gs , i d = -250a g fs forward transconductance 2.5 s v ds = -24v, i d = -1.8a i dss drain-to-source leakage current -1.0 v ds = -24v, v gs = 0v -25 v ds = -24v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage 100 v gs = -20v gate-to-source reverse leakage -100 v gs = 20v q g total gate charge 25 i d = -1.8a q gs gate-to-source charge 2.9 nc v ds = -24v q gd gate-to-drain ("miller") charge 9.0 v gs = -10v (see figure 6) a t d(on) turn-on delay time 11 v dd = -15v t r rise time 17 i d = -1.8a t d(off) turn-off delay time 25 r g = 6.0 w t f fall time 18 r d = 8.2 w a c iss input capacitance 440 v gs = 0v c oss output capacitance 200 pf v ds = -25v c rss reverse transfer capacitance 93 ? = 1.0mhz (see figure 5) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) w a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) -2.5 a i sm pulsed source current (body diode) -29 v sd body diode forward voltage -1.0 v t j = 25c, i s = -1.8a, v gs = 0v t rr reverse recovery time (body diode) 53 80 ns t j = 25c, i f = -1.8a q rr reverse recovery charge 66 99 nc di/dt = 100a/s a mosfet source-drain ratings and characteristics parameter max. units conditions if (av) max. average forward current 2.8 50% duty cycle. rectangular wave, tc = 25c 1.8 50% duty cycle. rectangular wave, tc = 70c i sm max. peak one cycle non-repetitive 200 5s sine or 3s rect. pulse following any rated surge current 20 10ms sine or 6ms rect. pulse load condition & with vrrm applied a schottky diode maximum ratings a parameter max. units conditions vfm max. forward voltage drop 0.57 if = 3.0, tj = 25c 0.77 if = 6.0, tj = 25c 0.52 if = 3.0, tj = 125c 0.79 if = 6.0, tj = 125c . irm max. reverse leakage current 0.30 vr = 30v tj = 25c 37 tj = 125c ct max. junction capacitance 310 pf vr = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 4900 v/s rated vr schottky diode electrical specifications v ma ( hexfet is the reg. tm for international rectifier power mosfet's )
IRF7326D2 www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature power mosfet characteristics 1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse w idth t = 25c j 1 10 100 0.1 1 10 100 d ds 20 s pulse w idth t = 150c a -i , drain-to-source current (a) -v , drain-to-source volta g e ( v ) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v j 1 10 100 45678910 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source volta g e ( v ) v = -15v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature ( c ) r , drain-to-source o n resistance ds(on) (normalized) a v = -10v gs i = -3.0a d
IRF7326D2 4 www.irf.com power mosfet characteristics fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v, f = 1mhz c = c + c , c s hor ted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 q , total g ate char g e ( nc ) g a -v , g ate-to-s ource v oltage (v ) gs i = -3.0a v = -24v ds d for test circuit see figure 12 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain volta g e ( v ) 1 10 100 1 10 100 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRF7326D2 www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 9. maximum effective transient thermal impedance, junction-to-ambient power mosfet characteristics 0 2 4 6 8 10 12 14 0.00 0.10 0.20 0.30 0.40 0.50 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v 4 6 8 10 12 14 16 0.06 0.08 0.10 0.12 0.14 r , drain-to-source on resistance -v , gate-to-source volta g e (v) gs ds (on) id = -3.6a ( w ) ( w )
IRF7326D2 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage reverse current - i r (ma) fig. 12 - typical forward voltage drop characteristics 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 r 100c 75c 50c 25c 125c a t = 150c j reverse volta g e - v (v) fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 f(av) a avera g e forw ard current - i ( a ) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 v = 80% r ated r = 62.5c/w square wave thja r dc allowable am bient temperature - (c ) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 f instantaneous forward current - i (a) ( ) t = 150c t = 125c t = 25c j j j forward voltage drop - v f (v)
IRF7326D2 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inch es m illim et ers m in m a x m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 ba sic 1.27 b asic e1 .025 ba sic 0.635 b as ic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. d im en sion s a re sh ow n in millime te r s (in c he s). 4. ou tlin e con f orm s to jed e c ou tline ms -012aa . dimension does not include mold protrusions mold p r otr u sions n ot to exce ed 0.25 (.006). d ime ns ion s is th e le n gth of lea d for solde r in g to a su b stra te.. 5 6 a1 e1 q w afer lot code (last 4 digits) xxxx bottom part number top international r e c tif ie r log o f7101 312 date code (yw w ) y = last digit of the year w w = w eek a part marking (irf7101 example )
IRF7326D2 8 www.irf.com 330.00 (12.992) m ax . 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline confo rms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 8/99
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